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Part Image

2SC2712-GR(F) - Toshiba

Description: Vceo50V,Ic0.15A,Vce(sat)0.25V,hfe200to40 Toshiba 2SC2712-GR(F) NPN Bipolar Transistor, 0.15 A, 50 V, 3-Pin SC-59

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PCB Footprints
2SC2712-GR(F) - Toshiba PCB footprint - Other - Other - SC-59
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3D Models
2SC2712-GR(F) - Toshiba  - 3D model - Other - SC-59
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2SC2712-GR(F) Details

  • Manufacturer Part Number:

    2SC2712-GR(F)

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    SMALL OUTLINE, R-PDSO-G3

  • Reach Compliance Code:

    Unknown

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • kg CO2e/kg:

    8.8

  • Average Weight (mg):

    11.25

  • CO2e (mg):

    99

  • YTEOL:

    0

  • Additional Feature:

    LOW NOISE

  • Collector Current-Max (IC):

    0.15 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    200

  • JESD-30 Code:

    R-PDSO-G3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    125 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.15 W

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    80 MHz

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2SC2712-GR(F) Overview

Use the download button to access the 2SC2712-GR(F) schematic symbol, PCB footprint, and 3D model.
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