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Part Image

IRFB4227PBF - Infineon

Description: Infineon IRFB4227PBF N-channel MOSFET, 65 A, 200 V HEXFET, 3-Pin TO-220AB

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PCB Footprints
IRFB4227PBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220AB_1
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3D Models
IRFB4227PBF - Infineon  - 3D model - Transistor Outline, Vertical - TO-220AB_1
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IRFB4227PBF Details

  • Manufacturer Part Number:

    IRFB4227PBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Reach Compliance Code:

    Compliant

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    56 Weeks, 4 Days

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5.92

  • Avalanche Energy Rating (Eas):

    140 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    65 A

  • Drain-source On Resistance-Max:

    0.024 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    330 W

  • Pulsed Drain Current-Max (IDM):

    260 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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IRFB4227PBF Overview

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