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MMRF1008HR5 - NXP

Description: End of Life - Pulse Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 275 W, 50 VPackage:CFM2F, ceramic, flange mount flat package; 2 terminals; 9.78 mm x 34.04 mm x 3.75 mm bodyProduct:MMRF1008H, MMRF1008HS, MMRF1008GH 275 W pulse, 900-1215 MHz, RF power LDMOS transistor for defense and commercial pulse applications, such as IFF and DME.
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MRF6V12250HR3 Freescale Semiconductor

RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

MRF6V12250HR3 NXP Semiconductors

RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET


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Image	Part Number	Model
	MRF6V12250HR3 Freescale Semiconductor RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
	MRF6V12250HR3 NXP Semiconductors RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
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MMRF1008HR5 - NXP

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