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Part Image

MMBT5551LT1G - onsemi

Description: ONSEMI - MMBT5551LT1G - Bipolar (BJT) Single Transistor, General Purpose, NPN, 160 V, 600 mA, 225 mW, SOT-23, Surface Mount

Download MMBT5551LT1G Model
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PCB Footprints
MMBT5551LT1G - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT−23 (TO−236) CASESOT−23 (TO−236) CASE 318 ISSUE AT 318 ISSUE AT
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3D Models
MMBT5551LT1G - onsemi  - 3D model - SOT23 (3-Pin) - SOT−23 (TO−236) CASESOT−23 (TO−236) CASE 318 ISSUE AT 318 ISSUE AT
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MMBT5551LT1G Details

  • Manufacturer Part Number:

    MMBT5551LT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23 (TO-236) 3 LEAD

  • Package Description:

    TO-236, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    318-08

  • Reach Compliance Code:

    Compliant

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.21.00.95

  • Factory Lead Time:

    50 Weeks

  • Date Of Intro:

    1999-01-01

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Collector Current-Max (IC):

    0.06 A

  • Collector-Emitter Voltage-Max:

    160 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    30

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.3 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • VCEsat-Max:

    0.2 V

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MMBT5551LT1G Overview

Use the download button to access the MMBT5551LT1G schematic symbol, PCB footprint, and 3D model.
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MMBT5551LT1G Alternates

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Part Image MMBT5551-AU_R1_000A1 PanJit Semiconductor

Small Signal Bipolar Transistor,

Part Image CMPT5551TR Central Semiconductor Corp

Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon,

Part Image MMBT5551LT3 onsemi

High Voltage NPN Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 10000-REEL

Part Image PMBT5551TRL NXP Semiconductors

TRANSISTOR 600 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

Part Image MMBT5551_NL Fairchild Semiconductor Corporation

Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN

For a full list of alternate parts for MMBT5551LT1G, check out Findchips.com