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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	7130LA35CB Renesas Electronics	1	The 7130 is a high-speed 1K x 8 Dual-Port Static RAM designed to be used as a stand-alone 8-bit Dual-Port RAM or as a "MASTER" Dual-Port RAM together with the 7140 "SLAVE" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with MIL-PRF-38535	Ceramic Dual-In-Line Packages	7130LA35CB	3D model not available Symbol and footprint available 2	1 Download Model
	71V3556SA133BG Renesas Electronics	1	The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers.	BGA	71V3556SA133BG	3D model available Symbol and footprint available 3	1 Download Model
	71T75602S150BGG8 Renesas Electronics	1	The 71T75602 2.5V CMOS Synchronous SRAM organized as 512K x 36 (18 Megabit). It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71T75602 contains data I/O, address and control signal registers.	BGA	71T75602S150BGG8	3D model available Symbol and footprint available 3	1 Download Model
	71T75902S85BGG8 Renesas Electronics	1	The 71T75902 2.5V CMOS Synchronous SRAM organized as 1M x 18 (18 Megabit). It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM, or Zero Bus Turnaround.	BGA	71T75902S85BGG8	3D model available Symbol and footprint available 3	1 Download Model

	71016S15PHGI8 Renesas Electronics	1	The 71016 5V CMOS SRAM is organized as 64K x 16. All bidirectional inputs and outputs of the 71016 are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.	Small Outline Packages	71016S15PHGI8	3D model available Symbol and footprint available 3	1 Download Model
	71V632S6PFGI8 Renesas Electronics	1	The 71V632 3.3V CMOS SRAM is organized as 64K x 32. The pipelined burst architecture provides cost-effective 3-1-1-1 secondary cache performance for processors up to 117MHz. The 71V632 SRAM contains write, data, address, and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.	Quad Flat Packages	71V632S6PFGI8	3D model available Symbol and footprint available 3	1 Download Model
	71321LA20JG8 Renesas Electronics	1	The 71321 is a high-speed 2K x 8 Dual-Port Static RAM with internal interrupt logic for interprocessor communications. It is designed to be used as a stand-alone 8-bit Dual-Port RAM or as a "MASTER" Dual-Port RAM together with the 71421 "SLAVE" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low sta	Plastic Leaded Chip Carrier	71321LA20JG8	3D model not available Symbol and footprint available 2	1 Download Model
	70V659S12BFI8 Renesas Electronics	1	The 70V659 is a high-speed 128K x 36 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 72-bit-or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 72-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each po	BGA	70V659S12BFI8	3D model available Symbol and footprint available 3	1 Download Model
	71V3577S80BQI8 Renesas Electronics	1	The 71V3577 3.3V CMOS SRAM is organized as 128K x 36. The 71V3577 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.	BGA	71V3577S80BQI8	3D model available Symbol and footprint available 3	1 Download Model
	71V65603S133PFGI Renesas Electronics	1	The 71V65603 3.3V CMOS SRAM is organized as 256K X 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V65603 contain data I/O, address and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM.	Quad Flat Packages	71V65603S133PFGI	3D model available Symbol and footprint available 3	1 Download Model
	5962-3829417MXA Renesas Electronics	1	The 5962-38294 (7164 SRAM) is organized as 8K x 8 and offers a reduced power standby mode. The low-power version also offers a battery backup data retention capability at power supply levels as low as 2V. All inputs and outputs are TTL-compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation.	Ceramic Dual-In-Line Packages	5962-3829417MXA	3D model not available Symbol and footprint available 2	1 Download Model
	R1WV6416RSD-5SI#B0 Renesas Electronics	1	Support is limited to customers who have already adopted these products.Renesas is the worldwide #1 Low Power SRAM supplier with a full lineup and well balanced long term support. High density and high performance RAMs using Renesas's original technology, for example the Advanced LPSRAM new memory cell concept are offered.	Small Outline Packages	R1WV6416RSD-5SI#B0	3D model available Symbol and footprint available 3	1 Download Model
	5962-9161707MXA Renesas Electronics	1	The 5962-91617 (IDT 7025) is a high-speed 8K x 16 Dual-Port Static RAM designed to be used as a stand-alone 128K-bit Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 32-bit or more word systems. An automatic power down feature controlled by Chip Enable (CE) permits the on-chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with MIL-PRF-38535 QML.	Other	5962-9161707MXA	3D model available Symbol and footprint available 3	1 Download Model
	71V67803S150PFGI8 Renesas Electronics	1	The 71V67803 3.3V CMOS SRAM is organized as 512K x 18. The 71V67803 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.	Quad Flat Packages	71V67803S150PFGI8	3D model available Symbol and footprint available 3	1 Download Model
	R1WV6416RBG-5SI#S0 Renesas Electronics	1	Support is limited to customers who have already adopted these products.Renesas is the worldwide #1 Low Power SRAM supplier with a full lineup and well balanced long term support. High density and high performance RAMs using Renesas's original technology, for example the Advanced LPSRAM new memory cell concept are offered.	BGA	R1WV6416RBG-5SI#S0	3D model available Symbol and footprint available 3	1 Download Model

	71V3556S100PFGI Renesas Electronics	1	The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers.	Quad Flat Packages	71V3556S100PFGI	3D model available Symbol and footprint available 3	1 Download Model
	71016S15YGI8 Renesas Electronics	1	The 71016 5V CMOS SRAM is organized as 64K x 16. All bidirectional inputs and outputs of the 71016 are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.	Other	71016S15YGI8	3D model available Symbol and footprint available 3	1 Download Model
	71V30S55TF Renesas Electronics	1	The 71V30 high-speed 1K x 8 Dual-Port Static RAM is designed to be used as a stand-alone 8-bit Dual-Port SRAM. It has two independent ports with separate control, address, and I/O pins that permit independent, asynchronous access for reads or writes to any location in memory. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low standby power mode.	Quad Flat Packages	71V30S55TF	3D model available Symbol and footprint available 3	1 Download Model
	R1LV0108ESN-5SI#S1 Renesas Electronics	1	The R1LV0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131, 072-word by 8-bit, fabricated by Renesas’s high-performance 0. 15um CMOS and TFT technologies. The R1LV0108E Series has realized higher density, higher performance and low power consumption. The R1LV0108E Series is suitable for memory applications where a simple interfacing, battery operating and battery backup are the important design objectives. It has been packaged in 32-pin SOP, 32-pin TSOP and 32-pin sTSOP.	Small Outline Packages	R1LV0108ESN-5SI#S1	3D model available Symbol and footprint available 3	1 Download Model
	7024L20G Renesas Electronics	1	The 7024 is a high-speed 4Kx 16 Dual-Port Static RAM designed to be used as a stand-alone 64K-bit Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 32-bit or more word systems. An automatic power down feature controlled by Chip Enable (CE) permits the on-chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with MIL-PRF-38535 QML is available.	Other	7024L20G	3D model available Symbol and footprint available 3	1 Download Model
	HM1-6514B/883 Renesas Electronics	1	The HM-6514/883 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and low power operation. On chip latches are provided for addresses allowing efficient interfacing with microprocessor systems. The data output can be forced to a high impedance state for use in expanded memory arrays. Gated inputs allow lower operating current and also eliminates the need for pull up or pull down resistors. The HM-6514/88	Dual-In-Line Packages	HM1-6514B/883	3D model available Symbol and footprint available 3	1 Download Model
	71V016SA15YGI8 Renesas Electronics	1	The 71V016 3.3V CMOS SRAM is organized as 64K x 16. All bidirectional inputs and outputs of the 71V016 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.	Other	71V016SA15YGI8	3D model available Symbol and footprint available 3	1 Download Model
	70T631S15BF Renesas Electronics	1	The 70T631 is a high-speed 256K x 18 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 36-bit-or-more word system which would result in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each port to enter a very low standby power mode.	BGA	70T631S15BF	3D model available Symbol and footprint available 3	1 Download Model
	71V124SA15TYG Renesas Electronics	1	The 71V124 3.3V CMOS SRAM is organized as 128K x 8. The JEDEC center power/GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71V124 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.	Other	71V124SA15TYG	3D model available Symbol and footprint available 3	1 Download Model
	7164L25YGI8 Renesas Electronics	1	The 7164 5V CMOS SRAM is organized as 8K x 8. The 7164 offers a reduced power standby mode. The low-power (L) version also offers a battery backup data retention capability at power supply levels as low as 2V. All inputs and outputs of the IDT7164 are TTL-compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.	Other	7164L25YGI8	3D model available Symbol and footprint available 3	1 Download Model
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