GC511 Model Download Search Results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
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GC51105-81 Lockheed Martin Microwave
1 Variable Capacitance Diode, C Band to KA Band, 0.95pF C(T), Gallium Arsenide, Abrupt GC51105-81 0 Build or Request
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GC51111-85 Loral Microwave-Fsi
1 Variable Capacitance Diode, 3.3pF C(T), Abrupt GC51111-85 0 Build or Request
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GC51103-88 Frequency Sources
1 Variable Capacitance Diode, 0.6pF C(T) GC51103-88 0 Build or Request
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GC51105-30 Lockheed Martin Microwave
1 Variable Capacitance Diode, C Band to KA Band, 0.95pF C(T), Gallium Arsenide, Abrupt GC51105-30 0 Build or Request
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GC51102-30 Loral Microwave-Fsi
1 Variable Capacitance Diode, 0.47pF C(T), Abrupt GC51102-30 0 Build or Request
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GC51106-30 Loral Microwave-Fsi
1 Variable Capacitance Diode, 1.1pF C(T), Abrupt GC51106-30 0 Build or Request
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GC51105-89 Loral Microwave-Fsi
1 Variable Capacitance Diode, 0.95pF C(T), Abrupt GC51105-89 0 Build or Request
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GC51110-81 Frequency Sources
1 Variable Capacitance Diode, 2.7pF C(T) GC51110-81 0 Build or Request
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GC51101-81 Frequency Sources
1 Variable Capacitance Diode, 0.35pF C(T) GC51101-81 0 Build or Request
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GC51103-80 Loral Microwave-Fsi
1 Variable Capacitance Diode, 0.6pF C(T), Abrupt GC51103-80 0 Build or Request
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GC51111-45 Loral Microwave-Fsi
1 Variable Capacitance Diode, 3.3pF C(T), Abrupt GC51111-45 0 Build or Request
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GC51112-89 Lockheed Martin Microwave
1 Variable Capacitance Diode, C Band to KA Band, 4.1pF C(T), Gallium Arsenide, Abrupt GC51112-89 0 Build or Request
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GC51109-89 Frequency Sources
1 Variable Capacitance Diode, 2.2pF C(T) GC51109-89 0 Build or Request
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GC51108-45 Loral Microwave-Fsi
1 Variable Capacitance Diode, 1.8pF C(T), Abrupt GC51108-45 0 Build or Request
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GC51102-88 Frequency Sources
1 Variable Capacitance Diode, 0.47pF C(T) GC51102-88 0 Build or Request
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GC51101-30 Frequency Sources
1 Variable Capacitance Diode, 0.35pF C(T) GC51101-30 0 Build or Request
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GC51113-30 Lockheed Martin Microwave
1 Variable Capacitance Diode, C Band to KA Band, 5.1pF C(T), Gallium Arsenide, Abrupt GC51113-30 0 Build or Request
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GC51110-80 Loral Microwave-Fsi
1 Variable Capacitance Diode, 2.7pF C(T), Abrupt GC51110-80 0 Build or Request
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GC51112-45 Frequency Sources
1 Variable Capacitance Diode, 4.1pF C(T) GC51112-45 0 Build or Request
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GC51110-30 Lockheed Martin Microwave
1 Variable Capacitance Diode, C Band to KA Band, 2.7pF C(T), Gallium Arsenide, Abrupt GC51110-30 0 Build or Request
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GC51101-45 Frequency Sources
1 Variable Capacitance Diode, 0.35pF C(T) GC51101-45 0 Build or Request
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GC51102-89 Lockheed Martin Microwave
1 Variable Capacitance Diode, C Band to KA Band, 0.47pF C(T), Gallium Arsenide, Abrupt GC51102-89 0 Build or Request
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GC51101-80 Loral Microwave-Fsi
1 Variable Capacitance Diode, 0.35pF C(T), Abrupt GC51101-80 0 Build or Request
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GC51109-81 Loral Microwave-Fsi
1 Variable Capacitance Diode, 2.2pF C(T), Abrupt GC51109-81 0 Build or Request
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GC51105-80 Lockheed Martin Microwave
1 Variable Capacitance Diode, C Band to KA Band, 0.95pF C(T), Gallium Arsenide, Abrupt GC51105-80 0 Build or Request
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