Showing 11 of 11 results
| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
|---|---|---|---|---|---|---|---|
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INN100W070A
Innoscience
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1 | GaN-on-Silicon enhancement mode high-electron-mobility-transistor(HEMT) in Solder Bar WLCSP with 2.50mm x 1.50mm package size. | Other | INN100W070A |
3
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Download Model |
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INN650TA30AH
Innoscience
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1 | 650V GaN Enhancement-mode Power Transistor | Other | INN650TA30AH |
2
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Download Model |
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INN100FQ025A
Innoscience
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1 | GAN POWER TRANSISTOR | Other | INN100FQ025A |
3
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INN100FQ016A
Innoscience
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1 | GAN POWER TRANSISTOR | Other | INN100FQ016A |
3
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INS1001DE
Innoscience
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1 | Wide 6V to 20V Operating Voltage Range Dual Inverting and Non-Inverting PWM Inputs Independent Pullup and Pulldown Outputs forAdjustable Turn-on and Turn-off Speeds | Small Outline No-lead | INS1001DE |
3
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Download Model |
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INN650TA050AH
Innoscience
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1 | GAN POWER TRANSISTOR | Other | INN650TA050AH |
2
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ISG3201
Innoscience
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1 | 100V Half-Bridge Solid-GaN Integrating Gate Driver | Other | ISG3201 |
3
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INN700DA480B
Innoscience
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1 | GAN POWER TRANSISTOR | Other | INN700DA480B |
3
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INN150FQ032A
Innoscience
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1 | GAN POWER TRANSISTOR | Other | INN150FQ032A |
2
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INN100W032A
Innoscience
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1 | 100V Enhancement-mode GaN Power Transistor 100V 3.2mΩ 9.2nC 230A WLCSP 3.5x2.13 J16 -40 to 150˚C | Other | INN100W032A |
3
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INN700D140C
Innoscience
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1 | 700V GaN-on-Silicon Enhancement-mode Power Transistor in Dual Flat No-lead package (DFN) with 8 mm × 8 | INN700D140C |
1
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Download Model |