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2SA1416T-TD-E - onsemi

Description: Adoption of FBET, MBIT processes; High breakdown voltage and large current capacity; Fast switching speed; Ultrasmall size making it easy to provide high-density, small-sized hybrid ICs

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2SA1416T-TD-E - onsemi  - 3D model
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2SA1416T-TD-E Details

  • Manufacturer Part Number:

    2SA1416T-TD-E

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-89 / PCP-1

  • Package Description:

    SOT-89, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    419AU

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.21.00.75

  • Factory Lead Time:

    23 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    1 A

  • Collector-Base Capacitance-Max:

    13 pF

  • Collector-Emitter Voltage-Max:

    100 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    200

  • JESD-30 Code:

    R-PSSO-F3

  • JESD-609 Code:

    e6

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation Ambient-Max:

    0.5 W

  • Power Dissipation-Max (Abs):

    1.3 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin/Bismuth (Sn/Bi)

  • Terminal Form:

    FLAT

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    120 MHz

  • VCEsat-Max:

    0.6 V

2SA1416T-TD-E Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the 2SA1416T-TD-E is a standard SOT-223 package with a minimum pad size of 1.5mm x 1.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • To ensure reliable operation in high-temperature environments, it is recommended to derate the maximum junction temperature (Tj) by 1°C for every 1W of power dissipation above 1W. Additionally, ensure good thermal conduction by using a heat sink or thermal interface material.
  • The maximum safe operating area (SOA) for the 2SA1416T-TD-E is not explicitly stated in the datasheet. However, it is recommended to follow the guidelines provided in the onsemi application note AND8039/D for determining the SOA of power transistors.
  • While the 2SA1416T-TD-E can be used as a switch, its transition frequency (ft) is relatively low at 30MHz. For high-frequency applications, it is recommended to consider a transistor with a higher transition frequency, such as the 2SA1616T-TD-E.
  • To prevent thermal runaway, ensure that the transistor is properly heat-sinked, and the circuit is designed to limit the maximum power dissipation. Additionally, consider adding thermal protection devices, such as thermistors or thermal fuses, to detect and respond to overheating conditions.

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2SA1416T-TD-E Overview

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