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AT45DB641E-MHN-T - Renesas Electronics

Description: The AT45DB641E DataFlash is a member of our System Enhancing class of code and data storage solutions designed with an advanced dual SRAM buffer architecture that makes it the most efficient memory for data logging. It also incorporates a suite of advanced features that save system power, reduce processor overhead, simplify software development, and provide comprehensive data security and integrity options.

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AT45DB641E-MHN-T - Renesas Electronics PCB footprint - Small Outline No-lead - Small Outline No-lead - 8MA1
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AT45DB641E-MHN-T - Renesas Electronics  - 3D model - Small Outline No-lead - 8MA1
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AT45DB641E-MHN-T Details

  • Manufacturer Part Number:

    AT45DB641E-MHN-T

  • Brand Name:

    Renesas

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DFN

  • Package Description:

    UDFN-8

  • Country Of Origin:

    Taiwan

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.51

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    6

  • Clock Frequency-Max (fCLK):

    85 MHz

  • JESD-30 Code:

    R-PDSO-N8

  • JESD-609 Code:

    e4

  • Length:

    6 mm

  • Memory Density:

    67108864 bit

  • Memory IC Type:

    FLASH

  • Memory Width:

    1

  • Moisture Sensitivity Level:

    1

  • Number of Functions:

    1

  • Number of Terminals:

    8

  • Number of Words:

    67108864 words

  • Number of Words Code:

    64000000

  • Operating Mode:

    SYNCHRONOUS

  • Operating Temperature-Max:

    85 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    64MX1

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    HVSON

  • Package Equivalence Code:

    SOLCC8,.25

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

  • Parallel/Serial:

    SERIAL

  • Programming Voltage:

    1.8 V

  • Seated Height-Max:

    0.6 mm

  • Supply Voltage-Max (Vsup):

    3.6 V

  • Supply Voltage-Min (Vsup):

    1.7 V

  • Supply Voltage-Nom (Vsup):

    2.3 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    INDUSTRIAL

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    NO LEAD

  • Terminal Pitch:

    1.27 mm

  • Terminal Position:

    DUAL

  • Width:

    5 mm

AT45DB641E-MHN-T Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for the AT45DB641E-MHN-T is 2.7V to 3.6V.
  • The HOLD pin should be pulled high during power-up and power-down sequences to prevent unwanted data corruption.
  • The AT45DB641E-MHN-T supports up to 100,000 erase cycles.
  • Wear leveling can be implemented by distributing erase cycles across the entire memory array, using techniques such as dynamic wear leveling or static wear leveling.
  • The WP pin is used to prevent accidental writes to the device. When the WP pin is low, the device is write-protected.

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AT45DB641E-MHN-T Overview

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