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BAV70 - onsemi

Description: Obsolete - 100 V, 200 mA 4 Small Signal Switching Diodes in dual common cathode configuration

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PCB Footprints
BAV70 - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT−23 CASE 318BM ISSUE O
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3D Models
BAV70 - onsemi  - 3D model - SOT23 (3-Pin) - SOT−23 CASE 318BM ISSUE O
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BAV70 Details

  • Manufacturer Part Number:

    BAV70

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOT-23-3

  • Package Description:

    SOT-23, 3 PIN

  • Manufacturer Package Code:

    318BM

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.70

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    ULTRA FAST

  • Application:

    GENERAL PURPOSE

  • Breakdown Voltage-Min:

    75 V

  • Configuration:

    COMMON CATHODE, 2 ELEMENTS

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1 V

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    2 A

  • Number of Elements:

    2

  • Number of Phases:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Output Current-Max:

    0.2 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Power Dissipation-Max:

    0.35 W

  • Qualification Status:

    Not Qualified

  • Rep Pk Reverse Voltage-Max:

    70 V

  • Reverse Current-Max:

    5 µA

  • Reverse Recovery Time-Max:

    0.006 µs

  • Reverse Test Voltage:

    70 V

  • Surface Mount:

    YES

  • Terminal Finish:

    TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

BAV70 Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the BAV70 is -65°C to 150°C.
  • To ensure proper biasing, the BAV70 should be operated with a reverse voltage of at least 1V and a forward current of up to 100mA. Consult the datasheet for specific biasing requirements.
  • The maximum allowable power dissipation for the BAV70 is 500mW. Exceeding this limit may cause the device to overheat and fail.
  • Yes, the BAV70 is suitable for high-frequency applications up to 1GHz. However, the device's performance may degrade at higher frequencies due to internal capacitance and inductance.
  • To prevent electrostatic discharge (ESD) damage, handle the BAV70 with ESD-protective equipment and follow proper ESD handling procedures. The BAV70 has a human body model (HBM) ESD rating of 2kV.

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BAV70 Overview

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Part Image BAV70 Diotec Semiconductor AG

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Part Image BAV70TA Zetex / Diodes Inc

Rectifier Diode, 2 Element, 0.1A, 70V V(RRM), Silicon

Part Image BAV70 Jinan Gude Electronic Device Co Ltd

Rectifier Diode, 0.25A, 70V V(RRM)

Part Image BAV70GS08 Vishay Semiconductors

SIGNAL DIODE, PLASTIC, SOT-23, 3 PIN

Part Image BAV70-T Nexperia

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