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BCY79 - Central Semiconductor

Description: Bipolar Transistors - BJT PNP 45Vcbo 5.0Vebo 100mA 340mW 1W

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BCY79 - Central Semiconductor PCB footprint - Other - Other - Central TO18
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BCY79 - Central Semiconductor  - 3D model - Other - Central TO18
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BCY79 Details

  • Manufacturer Part Number:

    BCY79

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Transferred

  • ECCN Code:

    EAR99

  • Manufacturer:

    Central Semiconductor Corp

  • YTEOL:

    6.5

  • Collector Current-Max (IC):

    0.2 A

  • Collector-Emitter Voltage-Max:

    45 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    80

  • JEDEC-95 Code:

    TO-18

  • JESD-30 Code:

    O-MBCY-W3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    METAL

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    0.6 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    WIRE

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    180 MHz

  • Turn-off Time-Max (toff):

    800 ns

  • Turn-on Time-Max (ton):

    150 ns

BCY79 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the BCY79 is not explicitly stated in the datasheet. However, it's recommended to follow the general guidelines for SOA calculations, considering the device's voltage and current ratings, thermal resistance, and package type.
  • To ensure the BCY79 is properly biased for linear operation, follow these steps: 1) Choose a suitable collector-emitter voltage (Vce) and collector current (Ic) based on the application requirements. 2) Calculate the required base-emitter voltage (Vbe) using the datasheet's Vbe vs. Ic characteristics. 3) Select a suitable resistor value for the base bias circuit to achieve the desired Vbe.
  • For optimal performance and thermal management, follow these guidelines: 1) Use a thermally conductive PCB material and a heat sink if necessary. 2) Keep the transistor away from heat sources and ensure good airflow. 3) Use a copper pour or thermal vias to dissipate heat. 4) Minimize the distance between the transistor and the heat sink. 5) Follow the manufacturer's recommended PCB layout and thermal management guidelines.
  • To protect the BCY79 from electrostatic discharge (ESD), follow these precautions: 1) Handle the device by the body or use an anti-static wrist strap. 2) Use an anti-static mat or surface when handling the device. 3) Store the device in an anti-static bag or container. 4) Use ESD-protected equipment and tools during assembly and testing.
  • The reliability and failure rate expectations for the BCY79 are not explicitly stated in the datasheet. However, Central Semiconductor Corp provides a general reliability report for their products, which includes information on failure rates, MTBF, and FIT rates. Contact the manufacturer or a authorized distributor for more information.

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BCY79 Overview

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Part Image BCY79 Micro Electronics Ltd

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Part Image BCY79 onsemi

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Part Image BCY79 Diodes Incorporated

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Part Image BCY79 STMicroelectronics

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