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BD677ASTU - onsemi

Description: High DC Current Gain hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc; Monolithic Construction; BD675, 675A, 677, 677A, 679, 679A, 681 are complementary with BD676, 676A, 678, 678A, 680, 680A, 682; BD677, 677A, 679, 679A are equivalent to MJE 800, 801, 802, 803; Pb-Free Packages are Available

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BD677ASTU Overview

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BD677ASTU Alternates

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Image Part Number Model
Part Image BD677 Continental Device India Ltd

Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
Part Image BD677A Central Semiconductor Corp

Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
Part Image BD677A Samsung Semiconductor

Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
Part Image BD677A onsemi

Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
Part Image BD677 Crimson Semiconductor Inc

Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
For a full list of alternate parts for BD677ASTU, check out Findchips.com