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BD681STU - onsemi

Description: Pb-Free Packages are Available; High DC Current Gain hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc; Monolithic Construction; BD675, 675A, 677, 677A, 679, 679A, 681 are complementary with BD676, 676A, 678, 678A, 680, 680A, 682; BD677, 677A, 679, 679A are equivalent to MJE 800, 801, 802, 803

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BD681G Rochester Electronics LLC

4A, 100V, NPN, Si, POWER TRANSISTOR, TO-225AA, ROHS COMPLIANT, PLASTIC, CASE 77-09, 3 PIN

BD681 Rochester Electronics LLC

4A, 100V, NPN, Si, POWER TRANSISTOR, TO-225AA, PLASTIC, CASE 77-09, 3 PIN

BD681 Samsung Semiconductor

Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin

BD681 Central Semiconductor Corp

Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin

BD681S onsemi

Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin

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Image	Part Number	Model
	BD681G Rochester Electronics LLC 4A, 100V, NPN, Si, POWER TRANSISTOR, TO-225AA, ROHS COMPLIANT, PLASTIC, CASE 77-09, 3 PIN
	BD681 Rochester Electronics LLC 4A, 100V, NPN, Si, POWER TRANSISTOR, TO-225AA, PLASTIC, CASE 77-09, 3 PIN
	BD681 Samsung Semiconductor Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
	BD681 Central Semiconductor Corp Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
	BD681S onsemi Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
For a full list of alternate parts for BD681STU, check out Findchips.com

BD681STU - onsemi

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