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BS170 - onsemi

Description: N-channel JFET,BF245A 2mA 30V,BP

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BS170 - onsemi PCB footprint - Other - Other - TO−92 3 4.825x4.76 CASE 135AN ISSUE O
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BS170 - onsemi  - 3D model - Other - TO−92 3 4.825x4.76 CASE 135AN ISSUE O
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BS170 Details

  • Manufacturer Part Number:

    BS170

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-92-3

  • Pin Count:

    3

  • Manufacturer Package Code:

    135AN

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6.05

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    0.5 A

  • Drain-source On Resistance-Max:

    5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-226AA

  • JESD-30 Code:

    O-PBCY-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.83 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BS170 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the BS170 is not explicitly stated in the datasheet. However, it is generally recommended to operate the transistor within the specified voltage and current ratings to ensure reliable operation. Consult the application notes or contact onsemi support for more information.
  • To ensure the BS170 is properly biased for linear operation, make sure to provide a stable voltage supply, use a suitable bias resistor, and ensure the base-emitter voltage is within the recommended range (typically 0.6-0.8V). Consult the datasheet and application notes for more information on biasing the BS170.
  • The maximum power dissipation for the BS170 is dependent on the package type and ambient temperature. For the TO-92 package, the maximum power dissipation is 625mW at 25°C. For the SOT-23 package, it is 300mW at 25°C. Consult the datasheet for more information on power dissipation and thermal management.
  • Yes, the BS170 can be used as a switch, but it is not recommended due to its relatively low current gain (hFE) and high saturation voltage. The BS170 is primarily designed for linear amplifier applications. If you need a switching transistor, consider using a different device specifically designed for switching applications.
  • To handle ESD protection when working with the BS170, follow proper ESD handling procedures, such as using an ESD wrist strap, ESD mat, or ESD-safe work surface. Ensure that all equipment and tools are properly grounded, and avoid touching the device pins or leads. Consult the datasheet and application notes for more information on ESD protection.

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BS170 Overview

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Part Image BS170RLRAG Rochester Electronics LLC

500mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA, LEAD FREE, CASE 29-11, TO-92, 3 PIN

Part Image BS170D74Z Fairchild Semiconductor Corporation

500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, TO-92, 3 PIN

Part Image BS170T/R NXP Semiconductors

Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92

Part Image BS170J18Z Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92

Part Image BS170-J18Z Texas Instruments

500mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92

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