SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
1200 V
Drain Current-Max (ID):
180 A
FET Technology:
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code:
R-XUFM-X10
Number of Elements:
2
Number of Terminals:
10
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
150 °C
Package Body Material:
UNSPECIFIED
Package Shape:
RECTANGULAR
Package Style:
FLANGE MOUNT
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
880 W
Pulsed Drain Current-Max (IDM):
360 A
Surface Mount:
NO
Terminal Form:
UNSPECIFIED
Terminal Position:
UPPER
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON CARBIDE
BSM180D12P3C007 Frequently Asked Questions (FAQs)
A recommended PCB layout for optimal thermal performance would be to have a large copper area on the bottom layer connected to the thermal pad, and to use thermal vias to dissipate heat. A minimum of 2oz copper thickness is recommended.
To ensure proper soldering, use a soldering iron with a temperature of 350°C to 370°C, and apply a small amount of solder paste to the pads. Use a soldering technique that minimizes the time the iron is in contact with the device.
The recommended storage condition for the device is in a dry, cool place with a temperature range of 5°C to 30°C and humidity below 60%. Avoid storing the device in direct sunlight or near heat sources.
Yes, the BSM180D12P3C007 is suitable for high-reliability applications. ROHM Semiconductor has a rigorous testing and qualification process to ensure the device meets the required standards for reliability.
Handle the device by the edges or the body, avoiding touching the pins or electrical connections. Use an anti-static wrist strap or mat to prevent electrostatic discharge damage.
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BSM180D12P3C007 Overview
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