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BY254 - Taiwan Semiconductor

Description: Taiwan Semi BY254, Diode, 800V 3A, 2-Pin DO-201AD

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PCB Footprints
BY254 - Taiwan Semiconductor PCB footprint - Diodes, Axial Diameter Horizontal Mounting - Diodes, Axial Diameter Horizontal Mounting - DO-201AD
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3D Models
BY254 - Taiwan Semiconductor  - 3D model - Diodes, Axial Diameter Horizontal Mounting - DO-201AD
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BY254 Details

  • Manufacturer Part Number:

    BY254

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    GREEN, PLASTIC PACKAGE-2

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    Taiwan Semiconductor

  • YTEOL:

    0

  • Additional Feature:

    HIGH RELIABILITY, LOW POWER LOSS

  • Application:

    EFFICIENCY

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.1 V

  • JEDEC-95 Code:

    DO-201AD

  • JESD-30 Code:

    O-PALF-W2

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    150 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -65 °C

  • Output Current-Max:

    3 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    ROUND

  • Package Style:

    LONG FORM

  • Peak Reflow Temperature (Cel):

    260

  • Qualification Status:

    Not Qualified

  • Rep Pk Reverse Voltage-Max:

    800 V

  • Surface Mount:

    NO

  • Terminal Finish:

    PURE TIN

  • Terminal Form:

    WIRE

  • Terminal Position:

    AXIAL

BY254 Frequently Asked Questions (FAQs)

  • A recommended PCB layout for BY254 includes a thermal pad on the bottom of the transistor, connected to a large copper area on the PCB to dissipate heat efficiently. Additionally, placing vias under the transistor can help to further reduce thermal resistance.
  • To ensure proper biasing, the BY254 requires a base-emitter voltage (VBE) of around 0.65-0.75V. The collector-emitter voltage (VCE) should be set according to the specific application, but typically ranges from 10-30V. A stable voltage supply and proper decoupling capacitors are also essential for optimal performance.
  • The maximum safe operating area (SOA) for the BY254 is not explicitly stated in the datasheet. However, as a general guideline, the transistor should not be operated beyond its maximum ratings, such as 40V collector-emitter voltage and 3A collector current. Additionally, the power dissipation should not exceed 1.5W.
  • To protect the BY254 from ESD, it is recommended to handle the transistor with an anti-static wrist strap or mat. Additionally, the PCB should include ESD protection components, such as TVS diodes or ESD protection arrays, to prevent voltage spikes from damaging the transistor.
  • The typical switching time for the BY254 is around 10-20ns for turn-on and 20-30ns for turn-off. However, this can vary depending on the specific application, drive circuitry, and operating conditions.

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BY254 Overview

Use the download button to access the BY254 schematic symbol, PCB footprint, and 3D model.
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Part Image BY254GA0G Taiwan Semiconductor

Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD

Part Image BY254A0G Taiwan Semiconductor

Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD

Part Image BY254-G Sangdest Microelectronics (Nanjing) Co Ltd

Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2

Part Image BY254-T3 Sangdest Microelectronics (Nanjing) Co Ltd

Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD

Part Image BY254 Sangdest Microelectronics (Nanjing) Co Ltd

Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD

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