SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
DS Breakdown Voltage-Min:
1200 V
Drain-source On Resistance-Max:
0.0213 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss):
19 pF
JESD-30 Code:
R-XUFM-X9
Number of Elements:
2
Number of Terminals:
9
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
150 °C
Operating Temperature-Min:
-40 °C
Package Body Material:
UNSPECIFIED
Package Shape:
RECTANGULAR
Package Style:
FLANGE MOUNT
Polarity/Channel Type:
N-CHANNEL
Pulsed Drain Current-Max (IDM):
164 A
Surface Mount:
NO
Terminal Form:
UNSPECIFIED
Terminal Position:
UPPER
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON CARBIDE
CAB016M12FM3 Frequently Asked Questions (FAQs)
A 2-layer PCB with a thermal via array underneath the device is recommended. The thermal vias should be connected to a solid copper plane on the bottom layer to dissipate heat efficiently.
Ensure proper heat sinking, use a thermally conductive interface material, and follow the recommended PCB layout. Also, derate the device's power handling according to the temperature derating curve in the datasheet.
The device can withstand voltage transients up to 1.5 times the maximum rated voltage for a duration of 100 ms. However, it's recommended to use a voltage clamp or transient voltage suppressor to protect the device from excessive voltage spikes.
Yes, the CAB016M12FM3 is qualified to the Wolfspeed's high-reliability standards. However, additional testing and screening may be required for specific aerospace or high-reliability applications. Contact Wolfspeed for more information.
Follow proper handling and storage procedures, use ESD protection during assembly, and ensure that the device is not exposed to excessive voltage or current during operation.
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CAB016M12FM3 Overview
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