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DD435N40K - Infineon

Description: 60 mm Rectifier Diode with 4000 V in pressure contact technology

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DD435N40K Details

  • Manufacturer Part Number:

    DD435N40K

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    MODULE

  • Package Description:

    MODULE-3

  • Pin Count:

    3

  • Similar Group:

    DI08100610011494

  • Country Of Origin:

    Germany, Hungary

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Additional Feature:

    HIGH RELIABILITY

  • Application:

    GENERAL PURPOSE

  • Case Connection:

    ISOLATED

  • Configuration:

    SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.71 V

  • JESD-30 Code:

    R-PUFM-X3

  • Non-rep Pk Forward Current-Max:

    14500 A

  • Number of Elements:

    2

  • Number of Phases:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -40 °C

  • Output Current-Max:

    573 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    UL RECOGNIZED

  • Rep Pk Reverse Voltage-Max:

    4000 V

  • Reverse Current-Max:

    50000 µA

  • Reverse Test Voltage:

    4000 V

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

DD435N40K Frequently Asked Questions (FAQs)

  • The maximum operating frequency of the DD435N40K is 100 kHz, but it can be operated up to 200 kHz with reduced performance.
  • The DD435N40K has a thermal pad on the bottom of the package, which should be connected to a heat sink or a thermal interface material to ensure proper cooling. A thermal resistance of less than 1 K/W is recommended.
  • The recommended gate resistance for the DD435N40K is between 10 ohms and 20 ohms to ensure proper switching performance and to minimize electromagnetic interference (EMI).
  • Yes, the DD435N40K can be used in a half-bridge configuration, but it requires additional external components, such as a bootstrap diode and a gate driver, to ensure proper operation.
  • The DD435N40K has built-in overvoltage protection, but it's still recommended to use external protection devices, such as a voltage suppressor and a current limiter, to ensure the device is protected from overvoltage and overcurrent conditions.

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DD435N40K Overview

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About Infineon

Infineon Technologies develops semiconductor products for power conversion, control, sensing, connectivity, and security. Its portfolio includes power transistors, gate drivers, microcontrollers, sensors, communication devices, and supporting software. Power semiconductor technologies span silicon, silicon carbide, and gallium nitride, providing options for different switching, voltage, and efficiency requirements.

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Part Image DD435N40KHPSA1 Infineon Technologies AG

Rectifier Diode, 1 Phase, 2 Element, 573A, 4000V V(RRM), Silicon