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FCPF600N60ZL1-F154 - onsemi

Description: Ultra Low Gate Charge ( Typ. Qg = 20 nC ); Low Effective Output Capacitance ( Typ. Coss.eff = 74 pF ); 650 V at TJ = 150°C; Max. RDS(on) = 600 mΩ; 100% Avalanche Tested; ESD Improved Capacity

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FCPF600N60ZL1-F154 Overview

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FCPF600N60ZL1-F154 - onsemi

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