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FDMS7682 - onsemi

Description: Advanced Package and Silicon combination for low rDS(on) and high efficiency ; 100% UIL tested ; Next generation enhanced body diode technology, engineered for soft recovery ; Max rDS(on) = 6.3 mΩ at VGS = 10 V, ID = 14 A ; Max rDS(on) = 10.4 mΩat VGS = 4.5 V, ID = 11 A ; RoHS Compliant ; MSL1 robust package design

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FDMS7682 Details

  • Manufacturer Part Number:

    FDMS7682

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    PQFN-8

  • Package Description:

    POWER 56, 8 PIN

  • Manufacturer Package Code:

    483AE

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    24 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.3

  • Avalanche Energy Rating (Eas):

    29 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    16 A

  • Drain-source On Resistance-Max:

    0.0063 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MO-240AA

  • JESD-30 Code:

    R-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    33 W

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDMS7682 Frequently Asked Questions (FAQs)

  • A good PCB layout for the FDMS7682 involves keeping the input and output traces separate, using a solid ground plane, and placing the device close to the power source. Additionally, using a shielded inductor and placing it close to the device can help reduce EMI.
  • To ensure the FDMS7682 operates within its SOA, monitor the device's junction temperature, input voltage, and output current. Make sure the device is not exposed to excessive voltage, current, or temperature, and that the thermal design is adequate to prevent overheating.
  • The recommended input capacitor value for the FDMS7682 is typically in the range of 1-10uF, depending on the input voltage and output current requirements. A larger capacitor value can help reduce input voltage ripple, but may increase the startup time.
  • The FDMS7682 is rated for operation up to 150°C, but its performance and reliability may degrade at high temperatures. Ensure that the device is properly cooled and that the thermal design is adequate to prevent overheating.
  • To troubleshoot issues with the FDMS7682, start by checking the input voltage, output voltage, and output current. Verify that the device is properly connected and that the PCB layout is correct. Check for signs of overheating, such as excessive temperature or thermal shutdown. Consult the datasheet and application notes for guidance on troubleshooting specific issues.

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FDMS7682 Overview

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