FDP2572 - onsemi

Description: UIS Capability (Single Pulse and Repetitive Pulse); Low Qrr Body Diode; Low Miller Charge; RDS(on) = 45mΩ (Typ.) @ VGS = 10V, ID = 9A; QG(tot) = 26nC (Typ.) @ VGS = 10V; Qualified to AEC Q101

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Image	Part Number	Model
	FDP2572 Fairchild Semiconductor Corporation Power Field-Effect Transistor, 4A I(D), 150V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
	FDP2572_NL Fairchild Semiconductor Corporation Power Field-Effect Transistor, 4A I(D), 150V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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FDP2572 - onsemi

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