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FDPF10N60ZUT - onsemi

Description: Improved dv/dt capability; Low Crss ( Typ. 11pF); RDS(on) = 590mΩ ( Typ.)@ VGS = 10V, ID = 4.5A; 100% avalanche tested; Low gate charge ( Typ. 21nC); RoHS compliant

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FDPF10N60ZUT Details

  • Manufacturer Part Number:

    FDPF10N60ZUT

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3 FullPak

  • Package Description:

    TO-220F, 3 PIN

  • Manufacturer Package Code:

    221AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    2 Days

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    100 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    9 A

  • Drain-source On Resistance-Max:

    0.8 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    42 W

  • Pulsed Drain Current-Max (IDM):

    36 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDPF10N60ZUT Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the FDPF10N60ZUT can withstand is 175°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To ensure proper cooling, it's essential to provide a good thermal path from the device to a heat sink or a heat spreader. Use a thermal interface material (TIM) to fill any air gaps between the device and the heat sink. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
  • The recommended gate drive voltage for the FDPF10N60ZUT is between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency. It's essential to consult the datasheet and application notes for more information.
  • To protect the FDPF10N60ZUT from overvoltage and overcurrent, use a suitable voltage regulator and overcurrent protection circuitry. Additionally, consider using a transient voltage suppressor (TVS) to protect the device from voltage spikes and surges.
  • The maximum switching frequency that the FDPF10N60ZUT can handle depends on the specific application and operating conditions. However, as a general guideline, the device can handle switching frequencies up to 100 kHz. Consult the datasheet and application notes for more information.

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FDPF10N60ZUT Overview

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