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FDPF51N25 - onsemi

Description: Low gate charge ( Typ. 55nC); Low Crss ( Typ. 63pF); RDS(on) = 48mΩ ( Typ.)@ VGS = 10V, ID = 25.5A

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Part Image FDPF51N25 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 28A I(D), 250V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image FDPF51N25YDTU onsemi

Power Field-Effect Transistor, 51A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET