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IPB50N10S3L16ATMA2 - Infineon Technologies AG

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Part Image IPB50N10S3L-16 Infineon Technologies AG

Power Field-Effect Transistor, 50A I(D), 100V, 0.0206ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IPB50N10S3L16ATMA1 Infineon Technologies AG

Power Field-Effect Transistor, 50A I(D), 100V, 0.0206ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB