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IPD50R399CPXT - Infineon Technologies AG

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Part Image IPD50R399CPATMA1 Infineon Technologies AG

Power Field-Effect Transistor, 9A I(D), 500V, 0.399ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image TK10P50W,RQ Toshiba America Electronic Components

Power Field-Effect Transistor, 9.7A I(D), 500V, 0.43ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET

Part Image IPD50R399CPBTMA1 Infineon Technologies AG

Power Field-Effect Transistor, 9A I(D), 500V, 0.399ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA