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IRF7503TRPBF - Infineon

Description: Infineon IRF7503TRPBF Dual N-channel MOSFET, 2.4 A, 30 V HEXFET, 8-Pin MSOP

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IRF7503TRPBF Details

  • Manufacturer Part Number:

    IRF7503TRPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    MICRO-8

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    ULTRA LOW RESISTANCE

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    2.4 A

  • Drain-source On Resistance-Max:

    0.135 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    14 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF7503TRPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF7503TRPBF is -55°C to 175°C.
  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified ratings and guidelines.
  • The recommended gate drive voltage for the IRF7503TRPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • Yes, the IRF7503TRPBF is suitable for high-frequency switching applications, but ensure proper layout, decoupling, and thermal management to minimize losses and EMI.
  • Use a suitable overvoltage protection circuit, such as a TVS diode or a zener diode, and implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

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IRF7503TRPBF Overview

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Part Image IRF7503PBF Infineon Technologies AG

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