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IRFL014PBF - Vishay

Description: IRFL014PBF, N-channel MOSFET Transistor, 2.7 A 60 V, 4-Pin SOT-223

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PCB Footprints
IRFL014PBF - Vishay PCB footprint - SOT223 (3-Pin) - SOT223 (3-Pin) - SOT-223 (HIGH VOLTAGE)
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3D Models
IRFL014PBF - Vishay  - 3D model - SOT223 (3-Pin) - SOT-223 (HIGH VOLTAGE)
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IRFL014PBF Details

  • Manufacturer Part Number:

    IRFL014PBF

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-261AA

  • Package Description:

    SOT-223, 4 PIN

  • Pin Count:

    4

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    100 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    2.7 A

  • Drain-source On Resistance-Max:

    0.2 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    29 pF

  • JEDEC-95 Code:

    TO-261AA

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    3.1 W

  • Pulsed Drain Current-Max (IDM):

    22 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFL014PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFL014PBF is -55°C to 175°C.
  • The IRFL014PBF is a HEXFET Power MOSFET, not an IGBT.
  • The maximum current rating for the IRFL014PBF is 14A.
  • Yes, the IRFL014PBF is suitable for high-frequency switching applications due to its low gate charge and fast switching times.
  • The typical gate-source threshold voltage for the IRFL014PBF is 2.5V to 4.5V.

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IRFL014PBF Overview

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Image Part Number Model
Part Image SIHFL014TR-GE3 Vishay Siliconix

Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

Part Image IRFL014TR International Rectifier

Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

Part Image IRFL014PBF Vishay Siliconix

Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

Part Image IRFL014TR Vishay Intertechnologies

Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

Part Image IRFL014 Vishay Siliconix

Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

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