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IRFR4105ZPBF - Infineon

Description: MOSFET 55V 1 N-CH HEXFET 24.5mOhms 18nC

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IRFR4105ZPBF Overview

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IRFR4105ZPBF Alternates

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Image Part Number Model
Part Image IRFR4105ZPBF International Rectifier

Power Field-Effect Transistor, 30A I(D), 55V, 0.0245ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image AUIRFR4105ZTRR International Rectifier

Power Field-Effect Transistor, 30A I(D), 55V, 0.0245ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image AUIRFR4105ZTRL International Rectifier

Power Field-Effect Transistor, 30A I(D), 55V, 0.0245ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image AUIRFR4105Z Infineon Technologies AG

Power Field-Effect Transistor, 30A I(D), 55V, 0.0245ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image AUIRFR4105ZTR Infineon Technologies AG

Power Field-Effect Transistor, 30A I(D), 55V, 0.0245ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

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