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IRFS541 - Samsung Semiconductor

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IRFS541 Overview

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IRFS541 Alternates

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Image Part Number Model
Part Image IRFI640GPBF Vishay Siliconix

Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRFI640GPBF International Rectifier

Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRF640FI STMicroelectronics

10A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN

Part Image IRFS641 Samsung Semiconductor

Power Field-Effect Transistor, 9.8A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image 2SK2522-01MR Fuji Electric Co Ltd

Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220

For a full list of alternate parts for IRFS541, check out Findchips.com