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IRFS630 - Samsung Semiconductor

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IRFS630 Overview

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IRFS630 Alternates

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Image Part Number Model
Part Image IRFI630G International Rectifier

Power Field-Effect Transistor, 5.9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image BUK444-200B NXP Semiconductors

Power Field-Effect Transistor, 4.7A I(D), 200V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRF630FI STMicroelectronics

Power Field-Effect Transistor, 6A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image 2SK2520-01MR Fuji Electric Co Ltd

Power Field-Effect Transistor, 10A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRFS631 Samsung Semiconductor

Power Field-Effect Transistor, 5.9A I(D), 150V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

For a full list of alternate parts for IRFS630, check out Findchips.com