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IRFZ24NPBF - Infineon

Description: HEXFET POWER MOSFET N-CHANNEL

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PCB Footprints
IRFZ24NPBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO220AB 2
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IRFZ24NPBF Details

  • Manufacturer Part Number:

    IRFZ24NPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    71 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    17 A

  • Drain-source On Resistance-Max:

    0.07 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    45 W

  • Pulsed Drain Current-Max (IDM):

    68 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFZ24NPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFZ24NPBF is -55°C to 175°C.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, the device should be mounted on a PCB with a thermal pad and thermal vias to dissipate heat efficiently.
  • The maximum gate-source voltage that can be applied to the IRFZ24NPBF is ±20V.
  • Yes, the IRFZ24NPBF is suitable for high-frequency switching applications up to 1 MHz. However, the device's performance and reliability may degrade at frequencies above 500 kHz.
  • To protect the IRFZ24NPBF from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the PCB and components are properly grounded. Additionally, use ESD-sensitive handling and storage procedures.

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IRFZ24NPBF Overview

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