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IRLR210A - Samsung Semiconductor

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IRLR210A Overview

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IRLR210A Alternates

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Image Part Number Model
Part Image FQD4N20TF Rochester Electronics LLC

3A, 200V, 1.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3

Part Image FQD4N20TM onsemi

Power Field-Effect Transistor, 3A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image IRLR210ATM Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 2.7A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image FQD4N20 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 3A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image IRLR210ATF Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 2.7A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

For a full list of alternate parts for IRLR210A, check out Findchips.com