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IXFB210N20P - LITTELFUSE

Description: Discmosfetn-Ch Hiperfet-Polar To-264(3)/Tube |Littelfuse IXFB210N20P

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PCB Footprints
IXFB210N20P - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IXFB110N60P3
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3D Models
IXFB210N20P - LITTELFUSE  - 3D model - Transistor Outline, Vertical - IXFB110N60P3
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IXFB210N20P Details

  • Manufacturer Part Number:

    IXFB210N20P

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    5.92

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    4000 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    210 A

  • Drain-source On Resistance-Max:

    0.0105 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1500 W

  • Pulsed Drain Current-Max (IDM):

    600 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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IXFB210N20P Overview

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