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IXFK180N15P - LITTELFUSE

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IXFK180N15P - LITTELFUSE  - 3D model
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IXFK180N15P Details

  • Manufacturer Part Number:

    IXFK180N15P

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    5.92

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    4000 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    180 A

  • Drain-source On Resistance-Max:

    0.011 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-264AA

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    380 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFK180N15P Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXFK180N15P is a standard TO-220 package with a minimum pad size of 70 mils x 70 mils. It's recommended to follow the PCB layout guidelines provided in the datasheet or application notes to ensure proper thermal performance and reliability.
  • While the IXFK180N15P is a fast-switching IGBT, it's not optimized for high-frequency switching applications above 100 kHz. For high-frequency applications, Littelfuse recommends using their dedicated high-frequency IGBTs, such as the IXFK180N15F or IXFK180N15H, which are designed for high-frequency switching up to 500 kHz.
  • To ensure proper cooling, it's essential to provide a good thermal interface between the IGBT and the heat sink. Use a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K, and apply a thin layer (less than 0.005 inches) to the IGBT's exposed metal surface. Also, ensure the heat sink is properly sized and has adequate airflow to dissipate the heat generated by the IGBT.
  • The IXFK180N15P is designed to withstand voltage transients up to 1.5 times the maximum rated voltage (1500 V) for a duration of 10 μs. However, it's recommended to limit voltage transients to 1.2 times the maximum rated voltage to ensure reliable operation and prevent damage to the device.
  • Yes, the IXFK180N15P can be used in a parallel configuration to increase current handling. However, it's essential to ensure that the devices are properly matched, and the gate drive and control circuits are designed to handle the increased current. Littelfuse recommends following their application notes and guidelines for paralleling IGBTs to ensure reliable operation and prevent damage to the devices.

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IXFK180N15P Overview

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