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IXFN240N25X3 - LITTELFUSE

Description: MOSFET N-CH 250V 240A SOT227B

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IXFN240N25X3 - LITTELFUSE  - 3D model
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IXFN240N25X3 Details

  • Manufacturer Part Number:

    IXFN240N25X3

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    3000 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    250 V

  • Drain Current-Max (ID):

    240 A

  • Drain-source On Resistance-Max:

    0.0045 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    1.5 pF

  • JESD-30 Code:

    R-PUFM-X4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    695 W

  • Pulsed Drain Current-Max (IDM):

    600 A

  • Reference Standard:

    UL RECOGNIZED

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFN240N25X3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXFN240N25X3 is a standard TO-220 package with a minimum pad size of 120 mils x 120 mils. It's recommended to follow the manufacturer's recommended land pattern and thermal pad design to ensure proper thermal performance and reliability.
  • While the IXFN240N25X3 is a fast-switching IGBT, it's not recommended for high-frequency switching applications above 100 kHz. The device is optimized for switching frequencies up to 50 kHz, and using it at higher frequencies may lead to increased losses and reduced reliability.
  • To ensure proper cooling, it's recommended to provide a heat sink with a thermal resistance of less than 1°C/W. The heat sink should be mounted to the device using a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K. Additionally, ensure good airflow around the heat sink and avoid blocking the airflow with other components or obstacles.
  • The maximum allowed voltage transient for the IXFN240N25X3 is 400 V for a duration of less than 10 μs. Exceeding this limit may cause damage to the device or affect its reliability. It's recommended to use a voltage clamp or snubber circuit to limit voltage transients in the application.
  • Yes, the IXFN240N25X3 can be used in a parallel configuration to increase current handling. However, it's essential to ensure that the devices are matched in terms of their electrical characteristics, and that the gate drive and control circuits are designed to handle the increased current. Additionally, the thermal management system should be designed to handle the increased power dissipation.

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IXFN240N25X3 Overview

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