Part Image

IXFN70N120SK - LITTELFUSE

Description: --

Download IXFN70N120SK Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
3D Models
IXFN70N120SK - LITTELFUSE  - 3D model
click to zoom
Note! To download footprints and symbols, use the build and request forms below

Build

Launch Build Wizard
Build Wizard not available for this package category!

Request (48 hours)

IXFN70N120SK Details

  • Manufacturer Part Number:

    IXFN70N120SK

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    0

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE AND KELVIN SENSOR

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    68 A

  • Drain-source On Resistance-Max:

    0.034 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    15 pF

  • JESD-30 Code:

    R-PUFM-X4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    YES

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

IXFN70N120SK Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the IXFN70N120SK is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • Yes, the IXFN70N120SK is suitable for high-frequency switching applications due to its low switching losses and fast switching times. However, it's essential to consider the device's thermal performance and ensure that the operating frequency does not exceed the recommended maximum frequency.
  • To ensure the reliability of the IXFN70N120SK in a high-power application, it's crucial to follow proper thermal management practices, such as providing adequate heat sinking, using a suitable thermal interface material, and ensuring good airflow around the device. Additionally, it's recommended to derate the device's power handling capability to account for any potential thermal limitations.
  • Yes, the IXFN70N120SK can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the devices are properly matched and that the gate drive signals are synchronized to prevent uneven current sharing and potential oscillations.
  • The recommended gate drive voltage for the IXFN70N120SK is between 10V and 15V, as specified in the datasheet. Using a higher gate drive voltage can improve the device's switching performance, but it may also increase the power consumption and EMI emissions.

Trust Checks

No trust score is available for this model.
Trust Score Unavailable
Sponsored

IXFN70N120SK Overview

Use the download button to access the IXFN70N120SK 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like IXFN7, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IXFN70N120SK

Showing 0 results

Select Package Category

Package Categories

Datasheet PDF Preview