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IXFP56N30X3M - LITTELFUSE

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IXFP56N30X3M Details

  • Manufacturer Part Number:

    IXFP56N30X3M

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-220, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6.22

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    700 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    300 V

  • Drain Current-Max (ID):

    56 A

  • Drain-source On Resistance-Max:

    0.027 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    3 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    36 W

  • Pulsed Drain Current-Max (IDM):

    112 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFP56N30X3M Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXFP56N30X3M is a standard TO-220 package with a minimum pad size of 4.5mm x 4.5mm and a thermal pad size of 2.5mm x 2.5mm. It's recommended to follow the manufacturer's recommended PCB layout and thermal management guidelines for optimal performance.
  • While the IXFP56N30X3M is a fast-switching IGBT, it's not recommended for high-frequency switching applications above 100 kHz. The device is optimized for switching frequencies up to 50 kHz, and using it at higher frequencies may lead to reduced performance, increased losses, and potential reliability issues.
  • Proper cooling is crucial for the IXFP56N30X3M. Ensure good thermal contact between the device and the heat sink by applying a thin layer of thermal interface material. The heat sink should be designed to provide adequate thermal dissipation, and the system should be designed to maintain a maximum junction temperature of 150°C or less.
  • While it's technically possible to parallel multiple IXFP56N30X3M devices, it's not recommended due to potential current imbalance and thermal runaway issues. Instead, consider using a single device with a higher current rating or exploring alternative solutions that can handle the required current.
  • The recommended gate drive voltage for the IXFP56N30X3M is between 10V and 15V, with a maximum gate drive voltage of 20V. Using a gate drive voltage outside of this range may affect the device's performance, reliability, or even cause damage.

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IXFP56N30X3M Overview

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