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IXFX420N10T - LITTELFUSE

Description: MOSFET N-CH 100V 420A PLUS247-3

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Symbol
IXFX420N10T - LITTELFUSE - PCB symbol
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PCB Footprints
IXFX420N10T - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - 3-Pin, PLUS247
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3D Models
IXFX420N10T - LITTELFUSE - 3D model - Transistor Outline, Vertical - 3-Pin, PLUS247
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IXFX420N10T Details

  • Manufacturer Part Number:

    IXFX420N10T

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    5

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    5000 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    420 A

  • Drain-source On Resistance-Max:

    0.0026 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    530 pF

  • JESD-30 Code:

    R-PSIP-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1670 W

  • Pulsed Drain Current-Max (IDM):

    1000 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFX420N10T Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXFX420N10T is a standard TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • Yes, the IXFX420N10T is rated for operation up to 150°C, but it's recommended to derate the current and voltage ratings according to the temperature derating curve provided in the datasheet.
  • To ensure reliability, follow proper handling and storage procedures, use a clean and dry environment, and avoid exceeding the recommended operating conditions. Additionally, consider using a fuse or overcurrent protection device to prevent damage from excessive current.
  • Yes, the IXFX420N10T is suitable for high-frequency switching applications up to 100 kHz, but it's essential to consider the device's switching losses, thermal management, and layout to minimize electromagnetic interference (EMI).
  • The recommended gate drive voltage for the IXFX420N10T is between 10V and 15V, with a maximum gate-source voltage of ±20V.

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IXFX420N10T Overview

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