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IXTA50N25T - LITTELFUSE

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IXTA50N25T Details

  • Manufacturer Part Number:

    IXTA50N25T

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    1500 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    250 V

  • Drain Current-Max (ID):

    50 A

  • Drain-source On Resistance-Max:

    0.06 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    60 pF

  • JEDEC-95 Code:

    TO-263AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    400 W

  • Pulsed Drain Current-Max (IDM):

    130 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXTA50N25T Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXTA50N25T is a TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm. It's recommended to follow the PCB layout guidelines provided in the datasheet or application notes to ensure proper thermal performance and reliability.
  • To ensure proper cooling, it's recommended to provide a heat sink with a thermal resistance of less than 10°C/W and a surface area of at least 10cm². Additionally, ensure good airflow around the device and avoid blocking the heat sink fins. You can also consider using a thermal interface material (TIM) to improve heat transfer between the device and heat sink.
  • The maximum allowed case temperature for the IXTA50N25T is 150°C. Operating the device above this temperature can reduce its reliability and lifespan. It's recommended to design your system to keep the case temperature below 125°C to ensure optimal performance and reliability.
  • While the IXTA50N25T is a power MOSFET, it's not optimized for high-frequency switching applications. The device has a relatively high gate charge and input capacitance, which can lead to high switching losses and reduced efficiency at high frequencies. If you need to switch at high frequencies, consider using a MOSFET specifically designed for high-frequency applications.
  • To protect the IXTA50N25T from ESD, follow proper handling and storage procedures, such as using anti-static wrist straps, mats, and bags. Ensure that your PCB design includes ESD protection components, such as TVS diodes or ESD protection arrays, to absorb any ESD events. Additionally, consider using a MOSFET with built-in ESD protection, such as the IXTA50N25T's internal ESD diodes.

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IXTA50N25T Overview

Use the download button to access the IXTA50N25T 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like IXTA5, or try a keyword search, such as Power Field-Effect Transistors

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