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IXTA62N15P - LITTELFUSE

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IXTA62N15P Details

  • Manufacturer Part Number:

    IXTA62N15P

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6.12

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    1000 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    62 A

  • Drain-source On Resistance-Max:

    0.04 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    150 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXTA62N15P Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXTA62N15P is a TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm. It's essential to follow the recommended footprint to ensure proper heat dissipation and electrical connection.
  • To ensure the reliability of IXTA62N15P in high-temperature applications, it's crucial to follow the recommended derating curves for voltage and current. Additionally, ensure proper heat sinking, and consider using a thermal interface material to reduce thermal resistance. It's also essential to follow the recommended storage and handling procedures to prevent damage.
  • The maximum allowed case temperature for IXTA62N15P is 150°C. Exceeding this temperature can lead to reduced performance, reliability issues, or even device failure. It's essential to ensure that the device operates within the recommended temperature range to maintain its performance and longevity.
  • Yes, IXTA62N15P can be used in a parallel configuration to increase current handling. However, it's essential to ensure that the devices are properly matched, and the current sharing is balanced to prevent uneven stress and potential device failure. Additionally, consider the increased power dissipation and heat generation when using multiple devices in parallel.
  • The recommended gate drive voltage for IXTA62N15P is between 10V and 15V. A higher gate drive voltage can improve switching performance, but it may also increase power dissipation and EMI. Ensure that the gate drive voltage is within the recommended range to maintain device reliability and performance.

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IXTA62N15P Overview

Use the download button to access the IXTA62N15P 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like IXTA6, or try a keyword search, such as Power Field-Effect Transistors

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