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IXTN210P10T - LITTELFUSE

Description: Discrete Semiconductor Modules TrenchP Channel Power MOSFETs

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IXTN210P10T Details

  • Manufacturer Part Number:

    IXTN210P10T

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOT-227B, 4 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    5

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    3000 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE AND KELVIN SENSOR

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    210 A

  • Drain-source On Resistance-Max:

    0.0075 Ω

  • FET Technology:

    TRENCH MOSFET

  • Feedback Cap-Max (Crss):

    1100 pF

  • JESD-30 Code:

    R-PUFM-X4

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    830 W

  • Pulsed Drain Current-Max (IDM):

    800 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Nickel (Ni)

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXTN210P10T Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXTN210P10T is a standard TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • Yes, IXTN210P10T is rated for operation up to 150°C junction temperature, but it's recommended to derate the current and voltage ratings according to the temperature derating curve in the datasheet.
  • To ensure reliability, follow proper handling and storage procedures, use a clean and dry PCB assembly process, and perform thorough testing and inspection according to industry standards such as IPC-A-610.
  • Yes, IXTN210P10T can be used in parallel configuration, but it's essential to ensure that the devices are matched in terms of electrical characteristics and thermal performance to avoid uneven current sharing and thermal runaway.
  • The recommended gate drive voltage for IXTN210P10T is 10-15V, but it can be operated with a gate drive voltage as low as 6V. However, a higher gate drive voltage may be required for high-frequency switching applications.

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IXTN210P10T Overview

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