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IXTN22N100L - LITTELFUSE

Description: MOSFET N-CH 1000V 22A SOT-227

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IXTN22N100L Details

  • Manufacturer Part Number:

    IXTN22N100L

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOT-227B, 4 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    1500 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1000 V

  • Drain Current-Max (ID):

    22 A

  • Drain-source On Resistance-Max:

    0.6 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    100 pF

  • JESD-30 Code:

    R-PUFM-X4

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    700 W

  • Pulsed Drain Current-Max (IDM):

    50 A

  • Reference Standard:

    UL RECOGNIZED

  • Surface Mount:

    NO

  • Terminal Finish:

    Nickel (Ni)

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXTN22N100L Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXTN22N100L is a standard TO-220 package with a minimum pad size of 70 mil x 70 mil and a thermal pad size of 100 mil x 100 mil.
  • While IXTN22N100L is a power MOSFET, it is not optimized for high-frequency switching applications. It has a relatively high gate charge and output capacitance, which may lead to high switching losses and EMI issues. For high-frequency switching applications, consider using a MOSFET with a lower gate charge and output capacitance.
  • To ensure the reliability of IXTN22N100L in a high-temperature environment, follow proper thermal management practices, such as providing adequate heat sinking, using a thermal interface material, and keeping the junction temperature below the maximum rated value of 150°C. Additionally, consider derating the device's power handling capability based on the ambient temperature.
  • Yes, you can parallel multiple IXTN22N100L devices to increase current handling capability, but it's essential to ensure that the devices are properly matched and that the gate drive circuitry is designed to handle the increased gate capacitance. Additionally, consider the thermal management implications of paralleling multiple devices.
  • The safe operating area (SOA) for IXTN22N100L is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general guideline, the SOA is typically defined as the region where the device can operate without exceeding its maximum junction temperature, voltage, and current ratings. Consult with a qualified engineer or the manufacturer's application support team for more information.

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IXTN22N100L Overview

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