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IXTQ40N50L2 - LITTELFUSE

Description: N CHANNEL POWER MOSFET, LINEAR L2, 500V, 40A, TO-3P; Transistor Polarity:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:40A; On Resistance Rds(on):0.17ohm; Transistor Mounting:Through Hole; No. of Pins:3Pins RoHS Compliant: Yes

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PCB Footprints
IXTQ40N50L2 - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-3P (IXTQ)
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3D Models
IXTQ40N50L2 - LITTELFUSE  - 3D model - Transistor Outline, Vertical - TO-3P (IXTQ)
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IXTQ40N50L2 Details

  • Manufacturer Part Number:

    IXTQ40N50L2

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    5.95

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    2000 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    40 A

  • Drain-source On Resistance-Max:

    0.17 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    540 W

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

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IXTQ40N50L2 Overview

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