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MC74LVX139DTR2G - onsemi

Description: High Speed: tPD = 6.0 ns (Typ) at VCC = 3.3 V; Low Power Dissipation: ICC = 4 µA (Max) at TA = 25°C; High Noise Immunity: VNIH = VNIL = 28% VCC; Power Down Protection Provided on Inputs; Balanced Propagation Delays; Designed for 2 V to 3.6 V Operating Range; Low Noise: VOLP = 0.5 V (Max); Pin and Function Compatible with Other Standard Logic Families; Latchup Performance Exceeds 300 mA; ESD Performance: HBM > 2000 V; Machine Model > 200 V; Chip Complexity: 100 FETs or 25 Equivalent Gates; Pb-Free Packages a

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Part Image HD74LV139T Renesas Electronics Corporation

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Part Image HD74LV139AT Hitachi Ltd

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Part Image HD74LV139ATELL Renesas Electronics Corporation

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Part Image 74LV139PWDH-T NXP Semiconductors

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