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MJD50G - onsemi

Description: Electrically Similar to Popular TIP47, and TIP50; Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix); Straight Lead Version in Plastic Sleeves ("-1" Suffix); Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix); 250 and 400 V (Min) VCEO(sus); 1 A Rated Collector Current; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are Pb-Free and are RoHS Compliant

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MJD50G Details

  • Manufacturer Part Number:

    MJD50G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK (SINGLE GAUGE) TO-252

  • Package Description:

    DPAK-3

  • Pin Count:

    3

  • Manufacturer Package Code:

    369C

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    1 A

  • Collector-Emitter Voltage-Max:

    400 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    10

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    15 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    10 MHz

MJD50G Frequently Asked Questions (FAQs)

  • The maximum SOA for the MJD50G is typically defined by the voltage and current ratings, but it's recommended to consult the onsemi application note AND8193/D for detailed SOA information.
  • To ensure proper biasing, follow the recommended biasing circuit and component values provided in the datasheet, and consider using a voltage regulator to maintain a stable voltage supply.
  • The MJD50G has a high power dissipation capability, so it's essential to ensure proper heat sinking and thermal management. Use a heat sink with a thermal resistance of ≤ 1°C/W, and consider using a thermal interface material to minimize thermal resistance.
  • Yes, the MJD50G can be used in switching applications, but it's essential to consider the transistor's switching characteristics, such as turn-on and turn-off times, and ensure that the circuit is designed to minimize switching losses.
  • To protect the MJD50G from ESD, follow proper handling and storage procedures, use ESD-protective packaging, and consider adding ESD protection devices, such as TVS diodes, in the circuit.

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MJD50G Overview

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