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MRF8P29300HSR6 - NXP

Description: No Longer Manufactured - Lateral N-Channel Broadband RF Power MOSFET, 2700-2900 MHz, 320 W, 30 VPackage:CFM4F, ceramic, flange mount flat package; 4 terminals; 10.16 mm x 32.26 mm x 4.58 mm bodyProduct:MRF8P29300H 300 W pulse over 2700-2900 MHz, 30 V RF power LDMOS transistor for S-Band commercial aerospace applications
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MRF8P29300HSR6 - NXP

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