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NRVBB20H100CTT4G - onsemi

Description: Low Forward Voltage: 0.64 V @ 125C; Low Power Loss/High Efficiency; High Surge Capacity; 175C Operating Junction Temperature; 20 A Total (10 A Per Diode Leg); Guard-Ring for Stress Protection; Pb-Free Package is Available Mechanical Characteristics:; Case: Epoxy, Molded; Epoxy Meets UL 94, V-0 @ 0.125 in; Weight: Approximately 1.9 grams; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds; AEC-Q101 Qua

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Part Image MBRB20H100CTHE3/81 Vishay Intertechnologies

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Part Image MB20H100CTHE3_A/P Vishay Intertechnologies

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