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NTD4858N-35G - onsemi

Description: Single N-Channel Power MOSFET 25V, 73A, 6.2mΩ

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NTD4858N-35G Details

  • Manufacturer Part Number:

    NTD4858N-35G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    3.5 mm IPAK, Straight Lead

  • Package Description:

    IPAK-3

  • Pin Count:

    3

  • Manufacturer Package Code:

    369AD

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    112.5 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    25 V

  • Drain Current-Max (ID):

    11.2 A

  • Drain-source On Resistance-Max:

    0.0093 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    54.5 W

  • Pulsed Drain Current-Max (IDM):

    146 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTD4858N-35G Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance would involve placing thermal vias under the device, using a solid ground plane, and keeping the thermal path as short as possible. It's also recommended to use a thermal pad on the bottom of the device.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended thermal design guidelines, use a suitable heat sink, and ensure good airflow around the device. Additionally, the device should be operated within its specified temperature range and derated accordingly.
  • To prevent ESD damage, it's recommended to handle the device with an ESD wrist strap or mat, use ESD-protected packaging, and follow proper PCB assembly and handling procedures. Additionally, the device has built-in ESD protection, but it's still important to follow proper ESD handling procedures.
  • Yes, the NTD4858N-35G is qualified for automotive and high-reliability applications. It meets the requirements of AEC-Q101 and is manufactured using a robust process that ensures high reliability. However, it's essential to follow the recommended design and qualification guidelines for these applications.
  • The recommended soldering conditions for the NTD4858N-35G are a peak temperature of 260°C, a dwell time of 10-30 seconds, and a soldering process that meets the requirements of IPC J-STD-020. For rework, it's recommended to use a rework station with a controlled temperature profile and a suitable rework technique.

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NTD4858N-35G Overview

Use the download button to access the NTD4858N-35G 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like NTD48, or try a keyword search, such as Power Field-Effect Transistors

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Part Image NTD4858N-1G onsemi

Power Field-Effect Transistor, 11.2A I(D), 25V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET