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NTHD4P02FT1G - onsemi

Description: Leadless SMD package featuring a MOSFET and Schottky Diode; 40% smaller than TSOP-6 package with similar thermal characteristics; Independent pinout to each device to ease circuit design; Ultra low VF Schottky

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NTHD4P02FT1 Rochester Electronics LLC

2.2A, 20V, 0.155ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 1206A-03, CHIPFET-8

NTHD4P02FT1 onsemi

Power Field-Effect Transistor, 2.2A I(D), 20V, 0.155ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET


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Image	Part Number	Model
	NTHD4P02FT1 Rochester Electronics LLC 2.2A, 20V, 0.155ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 1206A-03, CHIPFET-8
	NTHD4P02FT1 onsemi Power Field-Effect Transistor, 2.2A I(D), 20V, 0.155ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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NTHD4P02FT1G - onsemi

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