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NTMD6N03R2G - onsemi

Description: Power MOSFET 30V 6A 32 mOhm Dual N-Channel SO-8

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NTMD6N03R2G Details

  • Manufacturer Part Number:

    NTMD6N03R2G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOIC-8 Narrow Body

  • Package Description:

    SOIC-8

  • Pin Count:

    8

  • Manufacturer Package Code:

    751-07

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    325 mJ

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    6 A

  • Drain-source On Resistance-Max:

    0.032 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    135 pF

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2 W

  • Pulsed Drain Current-Max (IDM):

    30 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    110 ns

  • Turn-on Time-Max (ton):

    80 ns

NTMD6N03R2G Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the NTMD6N03R2G can withstand is 150°C.
  • To ensure reliability, it is recommended to derate the power dissipation of the NTMD6N03R2G at high temperatures, and to use a suitable heat sink to keep the junction temperature below 125°C.
  • The recommended gate resistor value for the NTMD6N03R2G is between 10 ohms and 100 ohms, depending on the specific application and switching frequency.
  • Yes, the NTMD6N03R2G is suitable for high-frequency switching applications up to 100 kHz, but the gate drive circuitry and layout should be optimized to minimize switching losses and ensure reliable operation.
  • To protect the NTMD6N03R2G from ESD, it is recommended to use ESD protection devices, such as TVS diodes, and to follow proper handling and storage procedures to prevent ESD damage.

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NTMD6N03R2G Overview

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Part Image NTMD6N03R2 Rochester Electronics LLC

6A, 30V, 0.032ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, CASE 751-07, SOIC-8